| PART |
Description |
Maker |
| CY62167G18-55BVXIES CY62167G30-45BVXIES CY62167GE3 |
16-Mbit (1 M words 16 bit / 2 M words 8 bit) Static RAM with Error-Correcting Code (ECC)
|
Cypress
|
| LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 |
4MEG (524288words x 8bit) flash memory
4 MEG (524288 words x 8 bits) Flash Memory
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| M5M5T5636GP M5M5T5636GP-20 M5M5T5636GP-22 M5M5T563 |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5T5636UG |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| K4C89323AF-GCF5 K4C89323AF-GCF6 K4C89323AF-GCFB K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
| M5M54R08J-12 M5M54R08J-15 D98025 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V5636UG-16 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5T5636G M5M5T5636GP-20 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V5636GP16 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Semiconductor
|
| M5M5T5636UG-20 M5M5T5636UG-22 M5M5T5636UG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Semiconductor
|
| MSM538002C |
524288 x 16-Bit or 1048576 x 8-Bit Mask ROM
|
OKI Semiconductor
|
